 2019 - 2020 | ||||||||||||||||||||||||||||||||||||||||||
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| 0512-4704 | Solid State Devices | |||||||||||||||||||||||||||||||||||||||||
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| FACULTY OF ENGINEERING | ||||||||||||||||||||||||||||||||||||||||||
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University credit hours: 4.0
Course description
Credit Points: 3.5
Prerequisite: Electronic Devices.
This course is an introduction to modern field of optoelectronics. It consists from several parts. In the first part theoretical background of a basic knowledge in solid state physics and physics of semiconductors materials is considered (free electron model. quantum size effect, near free electron model, electron energy band structure, photonic crystals, nanostructural materials). The second part presents light absorption effects in semiconductor materials, electron transitions in semiconductors of with direct and indirect electronic structure. It describes a wide application of light absorption effects for photoconductive intrinsic, extrinsic and avalanche detectors, n-i-n and p-i-n detectors, band gap engineering in HgCdTe, InSb semiconductors for mid- and long-wave infrared photodetectors as well the third generation of multicolor photodetectors. The third part is devoted to photon generation such as characteristic and noncharacteristic luminescence, photoluminescence, electroluminescence, cathodoluminescence, exciton luminescence, injection luminescence, luminescence from organic (polymer) materials, and their application in optoelectronic devices for color displays, optical amplifiers, medicine, and biotechnology. The fourth part considers light emitting diodes (p-n junction, carriers drift and diffusion, electron-hole recombination process and luminescence, quantum efficiency of LED and OLED devices). The fourth part is about semiconductor lasers (laser effect in p-n junction, spontaneous and stimulated photon emission, population inversion in p-n junction, gain, electron and photon confinement, lasers in optical communication, dense wavelength division multiplexing). The fifth part of the course considers quantum confinement effect and principles of semiconductor lasers (quantum well lasers, lasers based on quantum wires and quantum dots) and IR detectors (QWIP) based and their applications for thermal vision in military and medical devices.
The course is prepared in Power Point program and represents course on line using Internet and contains last scientific and technological reviews.
Prerequisite: Electronic Devices.
This course is an introduction to modern field of optoelectronics. It consists from several parts. In the first part theoretical background of a basic knowledge in solid state physics and physics of semiconductors materials is considered (free electron model. quantum size effect, near free electron model, electron energy band structure, photonic crystals, nanostructural materials). The second part presents light absorption effects in semiconductor materials, electron transitions in semiconductors of with direct and indirect electronic structure. It describes a wide application of light absorption effects for photoconductive intrinsic, extrinsic and avalanche detectors, n-i-n and p-i-n detectors, band gap engineering in HgCdTe, InSb semiconductors for mid- and long-wave infrared photodetectors as well the third generation of multicolor photodetectors. The third part is devoted to photon generation such as characteristic and noncharacteristic luminescence, photoluminescence, electroluminescence, cathodoluminescence, exciton luminescence, injection luminescence, luminescence from organic (polymer) materials, and their application in optoelectronic devices for color displays, optical amplifiers, medicine, and biotechnology. The fourth part considers light emitting diodes (p-n junction, carriers drift and diffusion, electron-hole recombination process and luminescence, quantum efficiency of LED and OLED devices). The fourth part is about semiconductor lasers (laser effect in p-n junction, spontaneous and stimulated photon emission, population inversion in p-n junction, gain, electron and photon confinement, lasers in optical communication, dense wavelength division multiplexing). The fifth part of the course considers quantum confinement effect and principles of semiconductor lasers (quantum well lasers, lasers based on quantum wires and quantum dots) and IR detectors (QWIP) based and their applications for thermal vision in military and medical devices.
The course is prepared in Power Point program and represents course on line using Internet and contains last scientific and technological reviews.