2015 - 2016

0512-2508-07
  Electronic Devices  
FACULTY OF ENGINEERING | ELECTRICAL ENGINEERING AND ELECTRONIC
Wolfson - Engineering130 1200-1400 Sem  2
 
 
University credit hours:  2.0

Course description
Credit Points: 5
Prerequisites: Introduction to Semiconductor Physics
Carrier motion in semiconductors, mobility and conductivity, diffusion and drift, Measurement methods for mobility, diffusivity and carrier concentrations. Hall effect. Haynes-Shockley experiment. Generation and recombination of excess carriers. Continuity equations.PN junction in thermal equilibrium: built-in potential, space charge and field in the depletion region. PN junction under bias. Carrier injection and extraction. Minority charge storage. Depletion and diffusion capacitances. Drift and diffusion currents. Ideal long and short PN diode dc characteristic. High injection, non-ideal diode effects, recombination current. Tunneling diode. Junction breakdown (Zener and avalanche). Switching, ac behaviour. Heterojunction. Bipolar junction transistor (BJT) – electrostatic description. Ideal BJT in forward active mode. Minority diffusion currents in narrow vs. wide base. BJT in various configurations, dc current and voltage gains. Ebers-Moll and Gummel-Poon models. Charge control equation. BJT breakdown mechanisms. Switching and small signal behaviour. Non-ideal BJT. Heterojunction bipolar transistor. Metal-semiconductor (MS) junctions. Electrostatic description, Schottky barrier, ohmic characteristic. MS junction under bias. Ideal MOS capacitor. C-V characteristic. MOS field effect transistor (MOSFET). NMOS and PMOS. Basics of transistor action, long channel I-V characteristic, short channel effects. Complementary MOS (CMOS). High electron mobility transistor (HEMT).

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