Credit Points: 3.5
Prerequisites: Electronic Devices
Introduction: review of basic modeling principles, ambipolar continuity equation, Poisson's equation, the concept of minority carrier life time, effect of doping and contamination, recombination near surfaces, surface recombination velocity, effective life time. Diodes. Diodes: - modeling – Large signal, small signal, noise model, applications to SPICE. Leakage currents, Shockley Read Hall Model, generation recombination current in space charge layers. Test cases – a) examples of planar junctions, b) the relation between process parameters to actual device parameters.
Bipolar device structures: Review PNP and NPN processes, parasitic transistors, steady state solution, Ebbers Moll model, modeling of leakage currents under short, open and loaded conditions. Second order effects and Gummel-Poon model, high injection and current crowding effect, substrate series resistance effects. Leakage currants in BJT- definitions, BJTs as diodes. Applications for analog circuits – i.e. logarithmic amplifiers, switches. Bipolar devices: Small signal models and applications to SPICE- equivalent circuits, small signal models, physical models and parametric models, S parameters, critical figure of Merits like ft, gain, GBW product, miller effect. Noise models. Bipolar device high speed switching, examples of special bipolar VLSI circuits – i.e. I2L. Test cases – a. parasitic CMOS bipolar transistors models. B. Low noise BJT structure; The field effect: basic analytical solution (Bare Si and Si with oxide), surface states effect, MOS capacitor - static model, dynamic model (deep depletion). Example – CCD and CID devices.
The field effect – trapping and contamination effects, applications of the Schocley Read Hall model on capacitor transient analysis, the concept of surface recombination velocity, the effect of the surface potential.. MOS capacitor – non-uniform doping effect, effect of ion-implantation on threshold voltage, surface and periphery effects, multi-layer gate insulator (ONO). Gate controlled diode - surface effects, long-channel MOS transistor model, threshold voltage, the transition from the linear regime to saturation, modeling at saturation, sub-threshold modeling. Surface effects on the leakage current of diodes. Short channel MOS models- DIBL, punch-through, Advanced MOS structures- LDD, HALO, CMOS; MOS transistor – Small signal models, noise models, applications to SPICE. Test cases – a 90 nm CMOS inverter nodeling. ULSI MOS structures - CMOS, new structures - strained Si MOS, SiGe HBTs; ULSI MOS structures - case studies.

 

 

Week
1	Introduction	Review of basic modeling principles, ambipolar continuity equation, Poisson's equation, the concept of minority carrier life time, effect of doping and contamination, recombination near surfaces, surface recombination velocity, effective life time. Diodes.
2-3	Diodes	Large signal, small signal, noise model, applications to SPICE. Leakage currents, Shockley Read Hall Model, generation recombination current in space charge layers. Test cases – a) examples of planar junctions, b) the relation between process parameters to actual device parameters.
4	Surface effect modeling	Trapping and contamination effects, applications of the Shockley-Read-Hall (SRH) model on capacitor transient analysis, the concept of surface recombination velocity, the effect of the surface potential..
5	The field effect (I)	Bare Si and Si with oxide physical modeling, surface states effect, MOS capacitor - static model, dynamic model (deep depletion). Example – CCD and CID devices.
6	The field effect (II)	Non-uniform doping effect, effect of ion-implantation on threshold voltage, surface and periphery effects, multi-layer gate insulator (ONO).
7-8	MOS transistor basics	Surface effects, long-channel MOS transistor model, threshold voltage, the transition from the linear regime to saturation, modeling at saturation, sub-threshold modeling. Surface effects on the leakage current of diodes.
8-9	Short channel MOS transistors	Saturation velocity effect, channel electrical field modeling, DIBL, punch-through, Advanced MOS structures- LDD, HALO, CMOS 8. MOS transistor models– Small signal models, noise models, and applications to SPICE.
10-11	MOS transistor models–	Small signal models, noise models, applications to SPICE. Test cases – a sub-45 nm CMOS inverter modeling.
12	Hot electron effects	Transistor’s reliability, devices for EEPRROM and flash memory
13	New MOS structures -	Strained Si MOS, Hi-K metal gate transistors, fin-FETs.

Credit Points: 3.5
Prerequisites: Electronic Devices
Introduction: review of basic modeling principles, ambipolar continuity equation, Poisson's equation, the concept of minority carrier life time, effect of doping and contamination, recombination near surfaces, surface recombination velocity, effective life time. Diodes. Diodes: - modeling – Large signal, small signal, noise model, applications to SPICE. Leakage currents, Shockley Read Hall Model, generation recombination current in space charge layers. Test cases – a) examples of planar junctions, b) the relation between process parameters to actual device parameters.
Bipolar device structures: Review PNP and NPN processes, parasitic transistors, steady state solution, Ebbers Moll model, modeling of leakage currents under short, open and loaded conditions. Second order effects and Gummel-Poon model, high injection and current crowding effect, substrate series resistance effects. Leakage currants in BJT- definitions, BJTs as diodes. Applications for analog circuits – i.e. logarithmic amplifiers, switches. Bipolar devices: Small signal models and applications to SPICE- equivalent circuits, small signal models, physical models and parametric models, S parameters, critical figure of Merits like ft, gain, GBW product, miller effect. Noise models. Bipolar device high speed switching, examples of special bipolar VLSI circuits – i.e. I2L. Test cases – a. parasitic CMOS bipolar transistors models. B. Low noise BJT structure; The field effect: basic analytical solution (Bare Si and Si with oxide), surface states effect, MOS capacitor - static model, dynamic model (deep depletion). Example – CCD and CID devices.
The field effect – trapping and contamination effects, applications of the Schocley Read Hall model on capacitor transient analysis, the concept of surface recombination velocity, the effect of the surface potential.. MOS capacitor – non-uniform doping effect, effect of ion-implantation on threshold voltage, surface and periphery effects, multi-layer gate insulator (ONO). Gate controlled diode - surface effects, long-channel MOS transistor model, threshold voltage, the transition from the linear regime to saturation, modeling at saturation, sub-threshold modeling. Surface effects on the leakage current of diodes. Short channel MOS models- DIBL, punch-through, Advanced MOS structures- LDD, HALO, CMOS; MOS transistor – Small signal models, noise models, applications to SPICE. Test cases – a 90 nm CMOS inverter nodeling. ULSI MOS structures - CMOS, new structures - strained Si MOS, SiGe HBTs; ULSI MOS structures - case studies.

 

 

Week
1	Introduction	Review of basic modeling principles, ambipolar continuity equation, Poisson's equation, the concept of minority carrier life time, effect of doping and contamination, recombination near surfaces, surface recombination velocity, effective life time. Diodes.
2-3	Diodes	Large signal, small signal, noise model, applications to SPICE. Leakage currents, Shockley Read Hall Model, generation recombination current in space charge layers. Test cases – a) examples of planar junctions, b) the relation between process parameters to actual device parameters.
4	Surface effect modeling	Trapping and contamination effects, applications of the Shockley-Read-Hall (SRH) model on capacitor transient analysis, the concept of surface recombination velocity, the effect of the surface potential..
5	The field effect (I)	Bare Si and Si with oxide physical modeling, surface states effect, MOS capacitor - static model, dynamic model (deep depletion). Example – CCD and CID devices.
6	The field effect (II)	Non-uniform doping effect, effect of ion-implantation on threshold voltage, surface and periphery effects, multi-layer gate insulator (ONO).
7-8	MOS transistor basics	Surface effects, long-channel MOS transistor model, threshold voltage, the transition from the linear regime to saturation, modeling at saturation, sub-threshold modeling. Surface effects on the leakage current of diodes.
8-9	Short channel MOS transistors	Saturation velocity effect, channel electrical field modeling, DIBL, punch-through, Advanced MOS structures- LDD, HALO, CMOS 8. MOS transistor models– Small signal models, noise models, and applications to SPICE.
10-11	MOS transistor models–	Small signal models, noise models, applications to SPICE. Test cases – a sub-45 nm CMOS inverter modeling.
12	Hot electron effects	Transistor’s reliability, devices for EEPRROM and flash memory
13	New MOS structures -	Strained Si MOS, Hi-K metal gate transistors, fin-FETs.

Credit Points: 3.5
Prerequisites: Electronic Devices
Introduction: review of basic modeling principles, ambipolar continuity equation, Poisson's equation, the concept of minority carrier life time, effect of doping and contamination, recombination near surfaces, surface recombination velocity, effective life time. Diodes. Diodes: - modeling – Large signal, small signal, noise model, applications to SPICE. Leakage currents, Shockley Read Hall Model, generation recombination current in space charge layers. Test cases – a) examples of planar junctions, b) the relation between process parameters to actual device parameters.
Bipolar device structures: Review PNP and NPN processes, parasitic transistors, steady state solution, Ebbers Moll model, modeling of leakage currents under short, open and loaded conditions. Second order effects and Gummel-Poon model, high injection and current crowding effect, substrate series resistance effects. Leakage currants in BJT- definitions, BJTs as diodes. Applications for analog circuits – i.e. logarithmic amplifiers, switches. Bipolar devices: Small signal models and applications to SPICE- equivalent circuits, small signal models, physical models and parametric models, S parameters, critical figure of Merits like ft, gain, GBW product, miller effect. Noise models. Bipolar device high speed switching, examples of special bipolar VLSI circuits – i.e. I2L. Test cases – a. parasitic CMOS bipolar transistors models. B. Low noise BJT structure; The field effect: basic analytical solution (Bare Si and Si with oxide), surface states effect, MOS capacitor - static model, dynamic model (deep depletion). Example – CCD and CID devices.
The field effect – trapping and contamination effects, applications of the Schocley Read Hall model on capacitor transient analysis, the concept of surface recombination velocity, the effect of the surface potential.. MOS capacitor – non-uniform doping effect, effect of ion-implantation on threshold voltage, surface and periphery effects, multi-layer gate insulator (ONO). Gate controlled diode - surface effects, long-channel MOS transistor model, threshold voltage, the transition from the linear regime to saturation, modeling at saturation, sub-threshold modeling. Surface effects on the leakage current of diodes. Short channel MOS models- DIBL, punch-through, Advanced MOS structures- LDD, HALO, CMOS; MOS transistor – Small signal models, noise models, applications to SPICE. Test cases – a 90 nm CMOS inverter nodeling. ULSI MOS structures - CMOS, new structures - strained Si MOS, SiGe HBTs; ULSI MOS structures - case studies.

 

 

Week
1	Introduction	Review of basic modeling principles, ambipolar continuity equation, Poisson's equation, the concept of minority carrier life time, effect of doping and contamination, recombination near surfaces, surface recombination velocity, effective life time. Diodes.
2-3	Diodes	Large signal, small signal, noise model, applications to SPICE. Leakage currents, Shockley Read Hall Model, generation recombination current in space charge layers. Test cases – a) examples of planar junctions, b) the relation between process parameters to actual device parameters.
4	Surface effect modeling	Trapping and contamination effects, applications of the Shockley-Read-Hall (SRH) model on capacitor transient analysis, the concept of surface recombination velocity, the effect of the surface potential..
5	The field effect (I)	Bare Si and Si with oxide physical modeling, surface states effect, MOS capacitor - static model, dynamic model (deep depletion). Example – CCD and CID devices.
6	The field effect (II)	Non-uniform doping effect, effect of ion-implantation on threshold voltage, surface and periphery effects, multi-layer gate insulator (ONO).
7-8	MOS transistor basics	Surface effects, long-channel MOS transistor model, threshold voltage, the transition from the linear regime to saturation, modeling at saturation, sub-threshold modeling. Surface effects on the leakage current of diodes.
8-9	Short channel MOS transistors	Saturation velocity effect, channel electrical field modeling, DIBL, punch-through, Advanced MOS structures- LDD, HALO, CMOS 8. MOS transistor models– Small signal models, noise models, and applications to SPICE.
10-11	MOS transistor models–	Small signal models, noise models, applications to SPICE. Test cases – a sub-45 nm CMOS inverter modeling.
12	Hot electron effects	Transistor’s reliability, devices for EEPRROM and flash memory
13	New MOS structures -	Strained Si MOS, Hi-K metal gate transistors, fin-FETs.