חיפוש חדש  חזור
מידע אישי לתלמיד

שנה"ל תש"ף

  טכנולוגיות מיקרו וננו אלקטרוניקה
  Microelectronics  
0512-4700-03
הנדסה | תואר ראשון - חשמל ואלקטרוניקה
סמ'  א'1100-1200103 הנדסת תוכנהתרגיל גב' דותן טלי
הקורס מועבר באנגלית
סילבוס מקוצר
שעות:                4 ש"ס
משקל:               3.5
דרישות קדם:      התקנים אלקטרוניים
תהליכי ייצור-כללי, המבנה הגבישי של סיליקון, פגמי סיליקון, תהליכי ייצור סיליקון
 (FZ,CZ), השתלת יונים, דיפוזיה, נידוף וגידול שכבות דקות (נידוף, ספטריניג, CVD, PECVD, חמצון סיליקון), תהליכי עיבוד (איכול רטוב, איכול יבש-פיזיקלי, כימי ו-RIE), פוטוליטוגרפיה, ציפויים מוליכים, מגעים חשמליים, טכנולוגיית התקנים (ביפולרית BIMOS, pMOS, nMOS ), נצילות ואמינות התקנים מיקרואלקטרוניים, שיטות CAD וכללי תכנון.
Course description
Credit points: 3.5
Prerequisites: Electronic Devices
This course covers all major microfabrication processes: General overview of the microfabrication technology. The structures of crystals and the silicon crystal, defects in crystals, fabrication processes of silicon crystals (CZ, FZ). Ion implantation. Diffusion. Thin layers: Evaporation, sputtering, CVD, PECVD, oxidation. Etching processes: Wet etching, dry etching (physical, chemical, RIE, DRIE). Photolithography. Conducting coatings. Electrical contacts and packaging: Wire bonding, flip-chip, wafer scale packaging. Overview of the Bipolar and CMOS technology in light of the subjects studied. Overview of MEMS in light of the subjects studies. Yield and reliability of the VLSI technology. Basic CAD for VLSI.
 
 
 
Goals
 
 
1. Micro and Nano fabrication process principles
2. Basic physics, chemistry
3. Process integration
4. Tools and methods
5. Metrology challenges
6. Trends and prospects
 
Each lecture, even it is specifically mentioned below, will start with basic principles, modeling, and continues with manufacturing, tools and methods and finally with metrology need and challenges, metrology tools and methods.
 
 
 
 
 
Syllabus – Micro/Nano technologies
 
Lecture
 
Date/Time (min)
Title
Content
1.
60
Introduction
Historical review and milestones, fabrication concepts, scaling, ITRS concepts
2
120
Lithography I
Principles of optical lithography –
Exposure: light sources, High pressure Hg arc lamps and Excimer lasers, masks, image modeling, aberrations,
Photoresist principles and modeling. The basic ABC model and its modification. FEM – dose and focus.
3
180
Lithography II
Tools: Steppers and step and scans,
Next generation lithography (NGL) – 157 nm immersion litho, EUV,EBL, IBL, XRL, Soft Litho and SPL.
Advanced Litho: Sub 45 nm processes, Double patterning, 
Metrology and process control.
Other methods and nanolithography.
4
 
180
Doping & Junction formation I
 
Ion implantation: Principles, interaction of energetic ions and matter, modeling and tools. Monte Carlo simulation of II.
Modeling of II in Si – shallow and deep implants
Ion implanters – tools outline and methods..
5
 
120
 
Doping & Junction formation II
 
Principles – diffusion equations, high concentration diffusion, effect of charged vacancies and interstitials, surface effects, 2D and 3D effects in highly dense circuits, examples for Source/Drain junction formation, well formation,
6
60
 
Rapid Thermal Processing
Fast thermal processes, rapid heating methods, irradiative heating, rapid temperature measurement
Rapid thermal oxidation and nitridation.
 
720
 
 
 
Cont.
Lecture
Time (min.)
Title
Content
7
120
Oxidation  
Thermal oxidation and gate formation.
8
120
 
Gas phase deposition – Epitaxial growth,
CVD & ALD
Principles and modeling – amorphous and polycrystalline materials. , CVD and Epitaxial growth.
Poly silicon – nucleation and growth, grain structure effect of silicidation.
Silicon dioxide - high and low temperatures, precursor effects, Nitrided oxide,
Silicon nitride, Tungsten and high-K gate materials
PECVD of oxide and low-K interlevel dielectrics
9
 
120
 
Metallization I
Contact formation
Silicides and the Silicdation process – contacts to ultra shallow contacts – examples of Co, Ti and Ni silicides
10
120
Metallization II
Interconnect processes: metal and dielectric deposition
Methods
1. Physical Vapor deposition (PVD) - Principles of evaporation and sputtering, various methods, modeling of sputtering, step coverage, deposition on sub 45 structures.
2. Electro-chemical-deposition (ECD)
3. Electroless plating
Functions
Conductors – Al, Cu
Barrier layers – Ta/Tan, CoWP
Capping layers – conducting, dielectrics
11
 
120
Etching & cleaning I
Wet etch– modeling and principles,
Wet clean
Dry etch – plasma etch, RIE, DRIE.
Etching process modules of silicon, oxide, metals and inter level dielectric
Trimming and APC
End point detection.
Microloading. Challenging etch - HKMG
 
600
 
 
 
Cont.
Lecture
Time
Title
Content
12
90
CMP
Slurry types
End points and integrated metrology
CMP needs and challenges (Oxide, Cu, Poly, etc)
13
90
Process integration
front end 
MOS transistor process: HKMG (different schemes), FINFET, stressors
 
14
90
Process integration
Backend
 
Some reliability issues- voids, electromigration
Planarization issues – Chemical mechanical polishing.
Interconnects, Damascene process – seed layers, barrier laser, capping layers.
15
90
Metrology and defect evaluation
Metrology methods for insulators and metals
 
16
60
3D Integration
Basic 3D integration principles – the next promising technology for CMOS
Through Silicon Via
Process variations
Tools and prospects
17
60
Advanced CMOS process – sub 22 nm technologies
ITRS again – critical issues and future bottlenecks.
Theoretical imitations – material issues, quantum and thermo dynamical issues,
Total
480
 
 
 

להצהרת הנגישות


אוניברסיטת ת