(for Computer Engineering Students)

Credit points: 3.5
Prerequisites: Linear Circuits and Systems .
This course is an introduction to modern physics of semiconductors and semiconductor devices used microelectronics. It consists from several parts. The first part is a theoretical background of a basic knowledge in solid state physics (atomic structure and atomic bonds, Bohr's model, electronic structure of atom; semiconductor crystals Si, Ge, GaAs; free electron model, electron energy band structure, electron and holes). The second part is devoted to fundamentals of semiconductor physics (Fermi statistics, intrinsic and extrinsic semiconductors, P-type and N-type semiconductors, degenerate and non-degenerate semiconductors; carriers drift, diffusion, scattering, electron-hole generation-recombination processes, life time; continuity equation, quasi-Fermi level). The third part considers properties of p-n junction (depletion region, built-in field, junction in equilibrium, forward and reverse bias, I-V characteristics). The fourth part contains basics of semiconductor devices such as MOS capacitor, MOS, MOSFET, CMOS and bi-polar transistors and some applications of these devices.

 

(for Computer Engineering Students)

Credit points: 3.5
Prerequisites: Linear Circuits and Systems .
This course is an introduction to modern physics of semiconductors and semiconductor devices used microelectronics. It consists from several parts. The first part is a theoretical background of a basic knowledge in solid state physics (atomic structure and atomic bonds, Bohr's model, electronic structure of atom; semiconductor crystals Si, Ge, GaAs; free electron model, electron energy band structure, electron and holes). The second part is devoted to fundamentals of semiconductor physics (Fermi statistics, intrinsic and extrinsic semiconductors, P-type and N-type semiconductors, degenerate and non-degenerate semiconductors; carriers drift, diffusion, scattering, electron-hole generation-recombination processes, life time; continuity equation, quasi-Fermi level). The third part considers properties of p-n junction (depletion region, built-in field, junction in equilibrium, forward and reverse bias, I-V characteristics). The fourth part contains basics of semiconductor devices such as MOS capacitor, MOS, MOSFET, CMOS and bi-polar transistors and some applications of these devices.